Talk:Universal Power Supply: Difference between revisions
Alex Shure (talk | contribs) (Created page with ""Rectifyers can be either passive schottky diode bridges, or active (IC-controlled) MOSFET H-bridges. Passive ones are cheaper, and ultimately more efficient for very high curren...") |
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This statement and the corresponding graph need better research. E.g. full-bridge Schottky diode rectifiers have a Vf_drop of at least 2*1V at high currents like those shown in the graph. | This statement and the corresponding graph need better research. E.g. full-bridge Schottky diode rectifiers have a Vf_drop of at least 2*1V at high currents like those shown in the graph. | ||
It should be noted that hard switched MOSFETS can be paralelled (and often are) without risk of thermal runaway because on resistance increases with temperature, so the active synchronous rectification option is scalable in ways that the passive diodes just aren't because their conduction voltage reduces with temperature. | |||
Revision as of 16:28, 27 December 2012
"Rectifyers can be either passive schottky diode bridges, or active (IC-controlled) MOSFET H-bridges. Passive ones are cheaper, and ultimately more efficient for very high currents, while active ones are superior for low-medium-and-maybe-high currents yet more expensive. This design choice affects price, producability and simplicity."
This statement and the corresponding graph need better research. E.g. full-bridge Schottky diode rectifiers have a Vf_drop of at least 2*1V at high currents like those shown in the graph.
It should be noted that hard switched MOSFETS can be paralelled (and often are) without risk of thermal runaway because on resistance increases with temperature, so the active synchronous rectification option is scalable in ways that the passive diodes just aren't because their conduction voltage reduces with temperature.